NSN: 5961-01-188-2592

Semiconductor Devices and Associated Hardware

TRANSISTOR

5961 - Semiconductor Devices and Associated Hardware

TRANSISTOR

ACT NOW! SUBMIT A QUICK QUOTE.

Technical Characteristics

  • Mounting Method

    threaded stud

  • Mounting Facility Quantity

    1

  • Thread Series Designator

    unf

  • Voltage Rating In Volts Per Characteristic

    350.0 maximum breakdown voltage, collector-to-emitter, base open and 400.0 maximum breakdown voltage, collector-to-emitter, with base short-circuited to emitter and 20.0 maximum emitter to base voltage, static, collector open

  • Internal Configuration

    junction contact

  • Special Features

    junction pattern arrangement: npn

  • Features Provided

    hermetically sealed case

  • Current Rating Per Characteristic

    10.00 amperes source cutoff current maximum

  • Semiconductor Material

    silicon

  • Overall Length

    1.245 inches maximum

  • Maximum Operating Temp Per Measurement Point

    200.0 deg celsius junction

  • Power Rating Per Characteristic

    100.0 watts small-signal input power, common-collector preset

  • Transfer Ratio

    90.0 maximum static forward current transfer ratio, common-emitter

  • Inclosure Material

    metal

  • Overall Width Across Flats

    0.687 inches maximum

  • Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

    to-61

  • Nominal Thread Size

    0.250 inches

  • Terminal Type And Quantity

    3 tab, solder lug and 1 threaded stud

Certified to
AS6081 Methods

Implementing Quality Procurement

A rigorous vendor selection process and vendor management system are essential to ensuring quality.
Read more...

Supplying Quality Products

We take every measure to ensure that we supply quality, authentic parts including a strict vendor selection process and rigorous product inspections..
Read more...

Providing Quality People

Our team of dedicated account managers, procurement professionals and specialized inspectors is the most valuable resource we have.
Read more...