NSN: 5961-01-189-8083

Technical Characteristics

• Inclosure Material

  plastic

• Mounting Facility Quantity

  1

• Internal Configuration

  junction contact

• Mounting Method

  unthreaded hole

• ~1

  llector to emitter voltage, dc with base short-circuited to emitter and 5.0 maxi

• Voltage Rating In Volts Per Characteristic

  250.0 maximum collector to emitter voltage/static/base open and 400.0 maximum co

• Current Rating Per Characteristic

  1.00 amperes maximum collector current, dc

• Maximum Operating Temp Per Measurement Point

  150.0 deg celsius junction

• Overall Length

  0.615 inches maximum

• Overall Height

  0.190 inches maximum

• Overall Width

  0.420 inches maximum

• Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

  to-220

• Internal Junction Configuration

  npn

• Semiconductor Material

  silicon

• ~2

  mum emitter to base voltage, static, collector open

• Power Rating Per Characteristic

  1.67 watts maximum total power dissipation

• Transfer Ratio

  300.0 maximum static forward current transfer ratio, common-emitter

• Terminal Type And Quantity

  3 uninsulated wire lead