NSN: 5961-01-212-7307
Semiconductor Devices and Associated Hardware
TRANSISTOR
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Voltage Rating In Volts Per Characteristic
60.0 maximum breakdown voltage, collector-to-emitter, with base short-circuited to emitter and 4.0 maximum emitter to base voltage, static, collector open and 33.0 maximum breakdown voltage, collector-to-emitter, base open
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End Item Identification
satellite communications set,an/wsc-3(v)9
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Mounting Method
threaded stud
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Mounting Facility Quantity
1
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Power Rating Per Characteristic
55.0 watts small-signal input power, common-collector preset
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Thread Series Designator
unc
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Overall Diameter
0.300 inches maximum
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Precious Material
gold
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Overall Length
0.700 inches maximum
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Internal Configuration
junction contact
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Special Features
junction pattern arrangement: npn
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Features Provided
hermetically sealed case
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Transfer Ratio
100.0 maximum static forward current transfer ratio, common-emitter
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Semiconductor Material
silicon
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Nominal Thread Size
0.164 inches
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Current Rating Per Characteristic
2.20 amperes source cutoff current maximum
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Terminal Type And Quantity
4 ribbon
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Inclosure Material
metal
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Precious Material And Location
leads gold