NSN: 5961-01-215-4064

Semiconductor Devices and Associated Hardware

TRANSISTOR

5961 - Semiconductor Devices and Associated Hardware

TRANSISTOR

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Technical Characteristics

  • ~1

    maximum emitter to base voltage, static, colle

  • Current Rating Per Characteristic

    2.00 amperes source cutoff current minimum and 0.20 amperes source cutoff current maximum

  • Internal Configuration

    junction contact

  • Overall Diameter

    0.335 inches maximum

  • Features Provided

    hermetically sealed case

  • Semiconductor Material

    silicon

  • Terminal Length

    0.500 inches minimum

  • Maximum Operating Temp Per Measurement Point

    200.0 deg celsius junction

  • Inclosure Material

    metal

  • Precious Material And Location

    leads gold

  • Transfer Ratio

    130.0 maximum static forward current transfer ratio, common-emitter

  • Power Rating Per Characteristic

    10.0 watts small-signal input power, common-collector preset

  • Terminal Type And Quantity

    3 uninsulated wire lead

  • Mounting Method

    terminal

  • Terminal Circle Diameter

    0.200 inches nominal

  • Special Features

    junction pattern arrangement: pnp

  • Overall Length

    0.260 inches maximum

  • Precious Material

    gold

  • Voltage Rating In Volts Per Characteristic

    -100.0 maximum breakdown voltage, collector-to-base, emitter open and -75.0 maximum breakdown voltage, collector-to-emitter, base open and -90.0 maximum breakdown voltage, collector-to-emitter, with specified resistance between base and emitter and -7.0

Certified to
AS6081 Methods

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