NSN: 5961-01-219-4517

Technical Characteristics

• Semiconductor Material

  silicon all semiconductor device diode

• Terminal Type And Quantity

  2 ferrule all semiconductor device diode

• Field Force Effect Type

  electrostatic charge

• Power Rating Per Characteristic

  110.0 milliwatts small-signal input power, common-collector absolute all semiconductor device diode

• Current Rating Per Characteristic

  40.00 milliamperes source cutoff current preset all semiconductor device diode

• Test Data Document

  96214-775085 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)

• Mounting Method

  compression all semiconductor device diode

• Maximum Operating Temp Per Measurement Point

  125.0 deg celsius ambient air

• Precious Material And Location

  contact surfaces plated gold

• Voltage Rating In Volts Per Characteristic

  2.0 maximum reverse voltage, instantaneous all semiconductor device diode

• Component Name And Quantity

  2 semiconductor device diode

• Overall Diameter

  0.078 inches minimum all semiconductor device diode and 0.084 inches maximum all semiconductor device diode

• Inclosure Material

  ceramic all semiconductor device diode

• Component Function Relationship

  matched

• Overall Length

  0.190 inches minimum all semiconductor device diode and 0.210 inches maximum all semiconductor device diode