NSN: 5961-01-221-3587
Semiconductor Devices and Associated Hardware
TRANSISTOR
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Inclosure Material
metal
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Terminal Length
0.500 inches minimum
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Internal Configuration
field effect-dual gate
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Channel Polarity And Control Type
n-channel insulated gate type
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Terminal Circle Diameter
0.100 inches nominal
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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~1
40.0 maximum gate to source voltage
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Voltage Rating In Volts Per Characteristic
60.0 maximum drain to gate voltage and 60.0 maximum drain to source voltage and
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Current Rating Per Characteristic
0.20 amperes maximum drain current
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Maximum Operating Temp Per Measurement Point
150.0 deg celsius ambient air
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Terminal Type And Quantity
3 uninsulated wire lead
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Overall Length
0.150 inches maximum
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Overall Diameter
0.230 inches maximum
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-52
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Mounting Method
terminal
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Power Rating Per Characteristic
315.0 milliwatts maximum total device dissipation
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Test Data Document
07187-8002573 drawing