NSN: 5961-01-251-3544
Semiconductor Devices and Associated Hardware
TRANSISTOR
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Inclosure Material
metal
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Internal Configuration
junction contact
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-111
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Internal Junction Configuration
npn
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Features Provided
hermetically sealed case
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Nominal Thread Size
0.190 inches
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Semiconductor Material
silicon
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~1
llector to emitter voltage/static/base open and 8.0 maximum emitter to base volt
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Voltage Rating In Volts Per Characteristic
140.0 maximum collector to base voltage/static/emitter open and 120.0 maximum co
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Current Rating Per Characteristic
10.00 amperes maximum collector current, dc and 1.00 amperes maximum base curren
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Maximum Operating Temp Per Measurement Point
150.0 deg celsius ambient air
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Terminal Type And Quantity
3 tab, solder lug
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Overall Length
1.145 inches maximum
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Mounting Facility Quantity
1
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Mounting Method
threaded stud
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Overall Width Across Flats
0.437 inches maximum
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~2
age, static, collector open
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~1
t, dc
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Power Rating Per Characteristic
30.0 watts maximum total power dissipation
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~1
imum static forward current transfer ratio, common-emitter
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Transfer Ratio
20.0 minimum static forward current transfer ratio, common-emitter and 200.0 max
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Thread Series Designator
unf