NSN: 5961-01-267-9739

Semiconductor Devices and Associated Hardware

SEMICONDUCTOR DEVICE,PHOTO

5961 - Semiconductor Devices and Associated Hardware

SEMICONDUCTOR DEVICE,PHOTO

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Technical Characteristics

  • Terminal Type And Quantity

    3 uninsulated wire lead

  • Power Rating Per Characteristic

    50.0 milliwatts small-signal input power, common-collector preset

  • Current Rating Per Characteristic

    50.00 milliamperes forward current, total rms nanoamperes

  • Inclosure Material

    glass

  • Internal Configuration

    junction contact

  • Voltage Rating In Volts Per Characteristic

    50.0 maximum collector to emitter voltage, dc and 7.0 maximum emitter to collector voltage, dc

  • Features Provided

    hermetically sealed case

  • Special Features

    plate phototransistor mtg and one ft buss wire 20 awg; internal junction configuration: npn

  • Maximum Operating Temp Per Measurement Point

    125.0 deg celsius ambient air

  • Semiconductor Material

    silicon

  • Overall Length

    0.115 inches maximum

  • Function For Which Designed

    phototransistor

  • Overall Diameter

    0.062 inches maximum

  • Mounting Method

    press fit

Certified to
AS6081 Methods

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