NSN: 5961-01-267-9739
Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,PHOTO
5961 - Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,PHOTO
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Technical Characteristics
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Terminal Type And Quantity
3 uninsulated wire lead
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Power Rating Per Characteristic
50.0 milliwatts small-signal input power, common-collector preset
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Current Rating Per Characteristic
50.00 milliamperes forward current, total rms nanoamperes
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Inclosure Material
glass
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Internal Configuration
junction contact
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Voltage Rating In Volts Per Characteristic
50.0 maximum collector to emitter voltage, dc and 7.0 maximum emitter to collector voltage, dc
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Features Provided
hermetically sealed case
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Special Features
plate phototransistor mtg and one ft buss wire 20 awg; internal junction configuration: npn
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Maximum Operating Temp Per Measurement Point
125.0 deg celsius ambient air
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Semiconductor Material
silicon
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Overall Length
0.115 inches maximum
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Function For Which Designed
phototransistor
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Overall Diameter
0.062 inches maximum
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Mounting Method
press fit