NSN: 5961-01-270-7877
Semiconductor Devices and Associated Hardware
TRANSISTOR
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Channel Polarity And Control Type (Non-Core)
n-channel insulated gate type
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Mounting Method
terminal
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Overall Diameter
0.230 inches maximum
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Internal Configuration
field effect-dual gate
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-72
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Features Provided
hermetically sealed case and electrostatic sensitive
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Voltage Rating In Volts Per Characteristic
30.0 maximum drain to gate voltage and 25.0 maximum drain to source voltage
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Overall Length
0.210 inches maximum
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Semiconductor Material
silicon
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Power Rating Per Characteristic
360.0 milliwatts small-signal input power, common-collector minimum
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Terminal Length
0.500 inches minimum
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Current Rating Per Characteristic
50.00 milliamperes source cutoff current maximum of standard range and -10.00 milliamperes zero-gate-voltage source current torr
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Inclosure Material
metal
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Maximum Operating Temp Per Measurement Point
175.0 deg celsius junction
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Terminal Type And Quantity
4 uninsulated wire lead
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Field Force Effect Type
electrostatic charge
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Terminal Circle Diameter
0.100 inches nominal