NSN: 5961-01-271-5340

Technical Characteristics

• Semiconductor Material

  silicon all semiconductor device diode

• Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

  to-3

• Test Data Document

  96214-807880 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)

• Component Name And Quantity

  2 semiconductor device diode

• Overall Length

  1.573 inches maximum

• Current Rating Per Characteristic

  30.00 amperes forward current, average absolute all semiconductor device diode and 500.00 amperes forward current, average preset all semiconductor device diode

• Features Provided

  hermetically sealed case and electrostatic sensitive

• Overall Width

  1.050 inches maximum

• Voltage Rating In Volts Per Characteristic

  54.0 maximum nonrepetitive peak reverse voltage all semiconductor device diode and 45.0 maximum working peak reverse voltage all semiconductor device diode

• Terminal Type And Quantity

  2 pin and 1 case

• Mounting Facility Quantity

  2

• Maximum Operating Temp Per Measurement Point

  150.0 deg celsius junction

• Mounting Method

  unthreaded hole

• Inclosure Material

  metal

• Electrode Internally-Electrically Connected To Case

  cathode

• Overall Height

  0.450 inches maximum