NSN: 5961-01-273-2189
Semiconductor Devices and Associated Hardware
TRANSISTOR
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Mounting Method
threaded stud
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Inclosure Material
ceramic
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Overall Width
0.580 inches maximum
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Mounting Facility Quantity
1
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Thread Series Designator
unc
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Overall Length
0.595 inches maximum
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Voltage Rating In Volts Per Characteristic
30.0 maximum breakdown voltage, collector-to-emitter, base open and 50.0 maximum breakdown voltage, collector-to-base, emitter open and 4.0 maximum breakdown voltage, emitter-to-base, collector open
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Overall Height
0.580 inches maximum
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Internal Configuration
junction contact
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Power Rating Per Characteristic
10.0 watts small-signal input power, common-collector absolute
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Features Provided
hermetically sealed case
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Special Features
the ceramic bodies of these devices contain beryllium oxide; junction pattern arrangement: npn
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Semiconductor Material
silicon
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Nominal Thread Size
0.164 inches
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Current Rating Per Characteristic
500.00 milliamperes source cutoff current maximum
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Terminal Type And Quantity
4 ribbon
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction