NSN: 5961-01-279-2129
Semiconductor Devices and Associated Hardware
TRANSISTOR
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Inclosure Material
metal
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-3
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Semiconductor Material
silicon
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Current Rating Per Characteristic
-1.50 amperes nominal drain current
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Maximum Operating Temp Per Measurement Point
150.0 deg celsius ambient air
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Terminal Type And Quantity
1 case and 2 pin
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Power Rating Per Characteristic
100.0 watts maximum total device dissipation
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Voltage Rating In Volts Per Characteristic
-500.0 maximum breakdown voltage, drain-to-source, with all other terminals short-circuited to source and -500.0 maximum breakdown voltage, gate-to-source, with all other terminals short-circuited to source
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Mounting Method
unthreaded hole
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Channel Polarity And Control Type
p-channel insulated gate type
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Internal Configuration
field effect
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Mounting Facility Quantity
2
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Overall Width
1.050 inches maximum
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Overall Height
0.350 inches nominal
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Overall Length
1.573 inches maximum