NSN: 5961-01-291-6409
Semiconductor Devices and Associated Hardware
TRANSISTOR
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Overall Width
0.380 inches minimum and 0.420 inches maximum
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Function For Which Designed
switching
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Internal Configuration
field effect
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Channel Polarity And Control Type
n-channel insulated gate type
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-220ab
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Mounting Method
terminal
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Transfer Ratio
6.0 minimum static forward current transfer ratio, common-emitter
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Terminal Type And Quantity
3 printed circuit
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Inclosure Material
ceramic
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Overall Length
0.560 inches minimum and 0.650 inches maximum
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Terminal Length
0.500 inches minimum and 0.580 inches maximum
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Overall Height
0.140 inches minimum and 0.190 inches maximum
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Features Provided
hermetically sealed case
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Semiconductor Material
silicon
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Voltage Rating In Volts Per Characteristic
100.0 maximum breakdown voltage, collector-to-emitter, base open
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Current Rating Per Characteristic
20.00 amperes maximum collector current, instantaneous
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Power Rating Per Characteristic
100.0 watts maximum total device dissipation