NSN: 5961-01-299-8456
Semiconductor Devices and Associated Hardware
TRANSISTOR
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Inclosure Material
metal
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Internal Configuration
field effect
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Maximum Operating Temp Per Measurement Point
150.0 deg celsius junction
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Voltage Rating In Volts Per Characteristic
35.0 maximum breakdown voltage, drain-to-source, with all other terminals short-circuited to source and 15.0 maximum forward gate to source voltage and -0.3 maximum reverse gate to source voltage
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Terminal Length
0.500 inches minimum
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Overall Length
0.240 inches minimum and 0.260 inches maximum
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Semiconductor Material
silicon
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Features Provided
burn in and electrostatic sensitive
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-39
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Electrode Internally-Electrically Connected To Case
drain
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Current Rating Per Characteristic
2.00 milliamperes zero-gate-voltage source current horsepower metric and 2.00 amperes source cutoff current maximum of standard range and 100.00 milliamperes zero-gate-voltage source current watts
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Power Rating Per Characteristic
8.33 watts small-signal input power, common-collector absolute
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Terminal Circle Diameter
0.200 inches nominal
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Mounting Method
terminal
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Terminal Type And Quantity
3 uninsulated wire lead
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Channel Polarity And Control Type (Non-Core)
n-channel insulated gate type
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Overall Diameter
0.350 inches minimum and 0.370 inches maximum