NSN: 5961-01-301-4830

Technical Characteristics

• Semiconductor Material

  silicon all semiconductor device diode

• Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

  do-35 all semiconductor device diode

• Component Function Relationship

  matched

• Component Name And Quantity

  12 semiconductor device diode

• Overall Length

  0.175 inches maximum all semiconductor device diode

• Inclosure Material

  glass all semiconductor device diode

• Capacitance Rating In Picofarads

  5.0 minimum all semiconductor device diode

• Voltage Rating In Volts Per Characteristic

  28.0 maximum reverse voltage, instantaneous all semiconductor device diode

• Features Provided

  burn in and hermetically sealed case

• Overall Diameter

  0.075 inches maximum all semiconductor device diode

• Mounting Method

  terminal all semiconductor device diode

• Function For Which Designed

  voltage variable capacitor

• Power Rating Per Characteristic

  200.0 milliwatts small-signal input power, common-collector absolute all semiconductor device diode

• Current Rating Per Characteristic

  50.00 milliamperes source cutoff current preset all semiconductor device diode

• Terminal Length

  0.500 inches minimum all semiconductor device diode

• Terminal Type And Quantity

  2 uninsulated wire lead all semiconductor device diode

• Maximum Operating Temp Per Measurement Point

  125.0 deg celsius junction all semiconductor device diode