NSN: 5961-01-302-9814

Technical Characteristics

• Maximum Operating Temp Per Measurement Point

  125.0 deg celsius case

• Overall Width

  0.358 inches maximum

• Voltage Rating In Volts Per Characteristic

  70.0 minimum breakdown voltage, dc all semiconductor device diode

• Mounting Method

  press fit

• Overall Height

  0.100 inches maximum

• Inclosure Material

  ceramic or glass or metal

• Component Name And Quantity

  2 semiconductor device diode and 2 transistor

• Voltage Rating In Volts Per Characteristic

  60.0 minimum breakdown voltage, collector-to-emitter, base open all transistor and 60.0 minimum breakdown voltage, collector-to-base, emitter open all transistor and 5.0 minimum breakdown voltage, emitter-to-base, collector open all transistor

• Semiconductor Material

  silicon all transistor

• Overall Length

  0.358 inches maximum

• Test Data Document

  04939-717801326 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)

• Terminal Type And Quantity

  20 case

• Semiconductor Material

  silicon all semiconductor device diode