NSN: 5961-01-303-3521

Semiconductor Devices and Associated Hardware

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5961 - Semiconductor Devices and Associated Hardware

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Technical Characteristics

  • Channel Polarity And Control Type

    n-channel insulated gate type

  • Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

    to-210ac

  • Field Force Effect Type

    electrostatic charge

  • Semiconductor Material

    silicon

  • Precious Material And Location

    terminal surface option gold

  • Precious Material

    gold

  • Current Rating Per Characteristic

    120.00 amperes maximum off-state current, peak

  • Power Rating Per Characteristic

    150.0 watts maximum total power dissipation

  • Maximum Operating Temp Per Measurement Point

    150.0 deg celsius ambient air

  • Test Data Document

    89954-312a5072 drawing

  • Thread Series Designator

    unf

  • Terminal Type And Quantity

    3 tab, solder lug

  • Inclosure Material

    metal

  • Overall Length

    1.330 inches maximum

  • Function For Which Designed

    switching

  • Mounting Facility Quantity

    1

  • Internal Configuration

    field effect

  • Mounting Method

    threaded stud

  • Overall Width Across Flats

    0.687 inches maximum

  • Nominal Thread Size

    0.250 inches

  • ~1

    d 20.0 maximum gate to source voltage

  • Voltage Rating In Volts Per Characteristic

    100.0 maximum drain to gate voltage and 100.0 maximum drain to source voltage an

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AS6081 Methods

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