NSN: 5961-01-303-3521
Semiconductor Devices and Associated Hardware
TRANSISTOR
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
ACT NOW! SUBMIT A QUICK QUOTE.
Technical Characteristics
-
Channel Polarity And Control Type
n-channel insulated gate type
-
Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-210ac
-
Field Force Effect Type
electrostatic charge
-
Semiconductor Material
silicon
-
Precious Material And Location
terminal surface option gold
-
Precious Material
gold
-
Current Rating Per Characteristic
120.00 amperes maximum off-state current, peak
-
Power Rating Per Characteristic
150.0 watts maximum total power dissipation
-
Maximum Operating Temp Per Measurement Point
150.0 deg celsius ambient air
-
Test Data Document
89954-312a5072 drawing
-
Thread Series Designator
unf
-
Terminal Type And Quantity
3 tab, solder lug
-
Inclosure Material
metal
-
Overall Length
1.330 inches maximum
-
Function For Which Designed
switching
-
Mounting Facility Quantity
1
-
Internal Configuration
field effect
-
Mounting Method
threaded stud
-
Overall Width Across Flats
0.687 inches maximum
-
Nominal Thread Size
0.250 inches
-
~1
d 20.0 maximum gate to source voltage
-
Voltage Rating In Volts Per Characteristic
100.0 maximum drain to gate voltage and 100.0 maximum drain to source voltage an