NSN: 5961-01-306-5477

Technical Characteristics

• Semiconductor Material

  silicon all semiconductor device diode

• Mounting Method

  terminal all semiconductor device diode

• Component Function Relationship

  matched

• Features Provided

  electrostatic sensitive

• Voltage Rating In Volts Per Characteristic

  15.0 maximum breakdown voltage, dc all semiconductor device diode

• Power Rating Per Characteristic

  250.0 milliwatts small-signal input power, common-collector absolute all semiconductor device diode

• Internal Junction Configuration

  pn all semiconductor device diode

• Component Name And Quantity

  2 semiconductor device diode

• Current Rating Per Characteristic

  20.00 milliamperes service voltage preset all semiconductor device diode

• Inclosure Material

  glass all semiconductor device diode

• Maximum Operating Temp Per Measurement Point

  200.0 deg celsius ambient air all semiconductor device diode

• Internal Configuration

  junction contact all semiconductor device diode

• Overall Diameter

  0.076 inches maximum all semiconductor device diode

• Terminal Length

  1.000 inches minimum all semiconductor device diode

• Terminal Type And Quantity

  2 uninsulated wire lead all semiconductor device diode

• Overall Length

  0.170 inches maximum all semiconductor device diode