NSN: 5961-01-307-5745

Semiconductor Devices and Associated Hardware

SEMICONDUCTOR DEVICE SET

5961 - Semiconductor Devices and Associated Hardware

SEMICONDUCTOR DEVICE SET

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Technical Characteristics

  • ~1

    type data on certain environmental and perfor

  • Transfer Ratio

    90.0 maximum static forward current transfer ratio, common-emitter all transistor

  • Component Function Relationship

    matched

  • Electrode Internally-Electrically Connected To Case

    collector all transistor

  • Overall Length

    0.240 inches minimum all transistor and 0.260 inches maximum all transistor

  • Terminal Circle Diameter

    0.200 inches nominal all transistor

  • Terminal Type And Quantity

    3 uninsulated wire lead all transistor

  • Semiconductor Material

    silicon all transistor

  • Overall Diameter

    0.370 inches maximum all transistor

  • Internal Junction Configuration

    npn all transistor

  • Maximum Operating Temp Per Measurement Point

    200.0 deg celsius ambient air all transistor

  • Power Rating Per Characteristic

    4.0 watts small-signal input power, common-collector minimum all transistor

  • Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

    to-5 all transistor

  • Internal Configuration

    junction contact all transistor

  • Inclosure Material

    metal all transistor

  • Terminal Length

    1.500 inches minimum all transistor

  • Component Name And Quantity

    2 transistor

  • Test Data Document

    73030-mil-s-19500/74d specification (includes engineering type bulletins, brochures,etc., that reflect specification type data in specification format; excludes commercial catalogs, industry directories, and similar trade publications, reflecting general

  • Special Features

    dc beta matched w/in 5 percent at vce=10 and ic=8 milliamps at +25 deg. c.

  • Current Rating Per Characteristic

    10.00 microamperes zero-gate-voltage source current preset all transistor

  • Mounting Method

    terminal all transistor

  • Voltage Rating In Volts Per Characteristic

    100.0 minimum breakdown voltage, collector-to-emitter, base open all transistor and 8.0 minimum breakdown voltage, emitter-to-base, collector open all transistor

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