NSN: 5961-01-313-6059

Semiconductor Devices and Associated Hardware

SEMICONDUCTOR DEVICE,THYRISTOR

5961 - Semiconductor Devices and Associated Hardware

SEMICONDUCTOR DEVICE,THYRISTOR

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Technical Characteristics

  • Inclosure Material

    glass

  • Overall Width

    0.400 inches nominal

  • Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

    to-220

  • Mounting Method

    terminal

  • Overall Length

    0.705 inches nominal

  • Terminal Length

    0.500 inches minimum

  • Overall Height

    0.165 inches nominal

  • Semiconductor Material

    silicon

  • Voltage Rating In Volts Per Characteristic

    400.0 maximum repetitive peak off-state voltage and 500.0 maximum nonrepetitive peak off-state voltage

  • Current Rating Per Characteristic

    10.00 amperes maximum on-state current,rms total and 100.00 amperes maximum peak nonrepetitive surge current

  • Power Rating Per Characteristic

    5.0 watts maximum peak gate power dissipation and 0.5 watts maximum average gate power dissipation

  • Maximum Operating Temp Per Measurement Point

    125.0 deg celsius junction

  • Terminal Type And Quantity

    3 uninsulated wire lead

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