NSN: 5961-01-324-5100

Technical Characteristics

• Semiconductor Material

  silicon all semiconductor device diode

• Voltage Rating In Volts Per Characteristic

  200.0 maximum reverse voltage, peak all semiconductor device diode

• Component Name And Quantity

  2 semiconductor device diode

• Overall Height

  0.250 inches minimum and 0.450 inches maximum

• Electrode Internally-Electrically Connected To Case

  anode

• Overall Width

  1.050 inches maximum

• End Item Identification

  5805-01-188-3993 central office,telephone,automatic

• Features Provided

  burn in and electrostatic sensitive and hermetically sealed case and reverse polarity

• Terminal Type And Quantity

  2 pin and 1 case

• Mounting Facility Quantity

  2

• Overall Length

  1.580 inches maximum

• Maximum Operating Temp Per Measurement Point

  150.0 deg celsius junction

• Mounting Method

  unthreaded hole

• Inclosure Material

  metal

• Current Rating Per Characteristic

  30.00 amperes forward current, total rms megahertz all semiconductor device diode and 300.00 amperes forward current, average preset all semiconductor device diode