NSN: 5961-01-325-7523
Semiconductor Devices and Associated Hardware
TRANSISTOR
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Power Rating Per Characteristic
1.0 watts small-signal input power, common-collector absolute
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Features Provided
burn in and hermetically sealed case
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Special Features
junction pattern arrangement: npn
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Internal Configuration
junction contact
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Terminal Circle Diameter
0.200 inches nominal
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Voltage Rating In Volts Per Characteristic
800.0 maximum breakdown voltage, collector-to-base, emitter open and 800.0 maximum breakdown voltage, collector-to-emitter, with specified resistance between base and emitter and 5.0 maximum breakdown voltage, emitter-to-base, collector open
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Mounting Method
terminal
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Terminal Type And Quantity
3 uninsulated wire lead
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Overall Length
0.250 inches nominal
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Current Rating Per Characteristic
0.50 amperes source cutoff current maximum and 250.00 milliamperes source cutoff current minimum
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Maximum Operating Temp Per Measurement Point
175.0 deg celsius junction
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Inclosure Material
metal
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Overall Diameter
0.352 inches nominal
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Terminal Length
0.500 inches minimum
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Semiconductor Material
silicon
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-5