NSN: 5961-01-331-3186

Technical Characteristics

• Voltage Rating In Volts Per Characteristic

  15.0 maximum drain to substrate voltage all transistor and 10.0 maximum emitter to base voltage, floating potential, dc with collector biased in reverse direction with respect to the base all transistor and 15.0 maximum source to substrate voltage all

• ~1

  transistor

• Overall Diameter

  0.208 inches minimum all transistor and 0.238 inches maximum all transistor

• Internal Configuration

  field effect all transistor

• Terminal Circle Diameter

  0.100 inches nominal all transistor

• Terminal Type And Quantity

  4 uninsulated wire lead all transistor

• Component Function Relationship

  matched

• Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

  to-72 all transistor

• Channel Polarity And Control Type (Non-Core)

  n-channel insulated gate type all transistor

• Semiconductor Material

  silicon all transistor

• Features Provided

  hermetically sealed case and electrostatic sensitive

• Overall Length

  0.170 inches minimum all transistor and 0.210 inches maximum all transistor

• Inclosure Material

  metal all transistor

• Current Rating Per Characteristic

  50.00 milliamperes source cutoff current maximum of standard range all transistor

• Maximum Operating Temp Per Measurement Point

  125.0 deg celsius ambient air all transistor

• Component Name And Quantity

  2 transistor

• Terminal Length

  0.500 inches minimum all transistor

• Power Rating Per Characteristic

  300.0 milliwatts small-signal input power, common-collector absolute all transistor

• Field Force Effect Type

  electrostatic charge

• Mounting Method

  terminal all transistor