NSN: 5961-01-332-1145

Semiconductor Devices and Associated Hardware

TRANSISTOR

5961 - Semiconductor Devices and Associated Hardware

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Technical Characteristics

  • Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

    to-3

  • Electrode Internally-Electrically Connected To Case

    collector

  • Current Rating Per Characteristic

    2.50 amperes source cutoff current maximum and 2.00 amperes source cutoff current minimum

  • Power Rating Per Characteristic

    125.0 watts small-signal input power, common-collector preset

  • Internal Configuration

    junction contact

  • Special Features

    junction pattern arrangement: npn

  • Overall Width

    1.050 inches maximum

  • Semiconductor Material

    silicon

  • Overall Length

    1.550 inches maximum

  • Terminal Type And Quantity

    2 pin and 1 case

  • Mounting Facility Quantity

    2

  • Maximum Operating Temp Per Measurement Point

    200.0 deg celsius junction

  • Mounting Method

    unthreaded hole

  • Overall Height

    0.250 inches minimum and 0.300 inches maximum

  • Voltage Rating In Volts Per Characteristic

    800.0 maximum breakdown voltage, collector to emitter, sustained and 1400.0 maximum collector-to-emitter, with voltage between base and emitter and 8.0 maximum emitter to base voltage, dc

  • Inclosure Material

    metal and glass

Certified to
AS6081 Methods

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