NSN: 5961-01-332-1145
Semiconductor Devices and Associated Hardware
TRANSISTOR
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-3
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Electrode Internally-Electrically Connected To Case
collector
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Current Rating Per Characteristic
2.50 amperes source cutoff current maximum and 2.00 amperes source cutoff current minimum
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Power Rating Per Characteristic
125.0 watts small-signal input power, common-collector preset
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Internal Configuration
junction contact
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Special Features
junction pattern arrangement: npn
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Overall Width
1.050 inches maximum
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Semiconductor Material
silicon
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Overall Length
1.550 inches maximum
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Terminal Type And Quantity
2 pin and 1 case
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Mounting Facility Quantity
2
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Mounting Method
unthreaded hole
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Overall Height
0.250 inches minimum and 0.300 inches maximum
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Voltage Rating In Volts Per Characteristic
800.0 maximum breakdown voltage, collector to emitter, sustained and 1400.0 maximum collector-to-emitter, with voltage between base and emitter and 8.0 maximum emitter to base voltage, dc
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Inclosure Material
metal and glass