NSN: 5961-01-332-8081
Semiconductor Devices and Associated Hardware
TRANSISTOR
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Voltage Rating In Volts Per Characteristic
-350.0 maximum breakdown voltage, drain-to-source, with all other terminals shor
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~1
t-circuited to source
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Mounting Method
terminal
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-39
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Internal Configuration
field effect
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Overall Diameter
0.370 inches maximum
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Overall Diameter
0.350 inches minimum and
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Overall Length
0.260 inches maximum
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Terminal Type And Quantity
3 uninsulated wire lead
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Maximum Operating Temp Per Measurement Point
150.0 deg celsius ambient air
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Power Rating Per Characteristic
3.5 watts maximum total power dissipation
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Current Rating Per Characteristic
0.20 amperes maximum drain current
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Semiconductor Material
silicon
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Features Provided
hermetically sealed case
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Terminal Circle Diameter
0.200 inches nominal
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Channel Polarity And Control Type
p-channel insulated gate type
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Terminal Length
0.500 inches minimum
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Overall Length
0.240 inches minimum and
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Inclosure Material
metal