NSN: 5961-01-336-5490

Technical Characteristics

• Overall Length

  0.140 inches minimum all semiconductor device diode and 0.180 inches maximum all semiconductor device diode

• Terminal Length

  1.000 inches minimum all semiconductor device diode and 1.500 inches maximum all semiconductor device diode

• Internal Junction Configuration

  pn all semiconductor device diode

• Mounting Method

  terminal all semiconductor device diode

• Field Force Effect Type

  electrostatic charge

• Function For Which Designed

  switching

• Terminal Type And Quantity

  2 uninsulated wire lead all semiconductor device diode

• End Item Identification

  5841-01-236-8951 detecting set r an/apr-39a(v)1

• Internal Configuration

  junction contact all semiconductor device diode

• Voltage Rating In Volts Per Characteristic

  50.0 maximum working peak reverse voltage, maximum peak total value all semiconductor device diode

• Features Provided

  hermetically sealed case and electrostatic sensitive

• Inclosure Material

  glass all semiconductor device diode

• Overall Diameter

  0.056 inches minimum all semiconductor device diode and 0.075 inches maximum all semiconductor device diode

• Component Name And Quantity

  2 semiconductor device diode

• Maximum Operating Temp Per Measurement Point

  150.0 deg celsius ambient air all semiconductor device diode

• Component Function Relationship

  matched

• Current Rating Per Characteristic

  225.00 milliamperes source cutoff current preset all semiconductor device diode and 75.00 milliamperes forward current, average absolute all semiconductor device diode

• Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

  do-35 all semiconductor device diode

• Semiconductor Material

  silicon all semiconductor device diode