NSN: 5961-01-338-2973
Semiconductor Devices and Associated Hardware
TRANSISTOR
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Power Rating Per Characteristic
200.0 watts small-signal input power, common-emitter peak
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-72
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Voltage Rating In Volts Per Characteristic
10.0 maximum breakdown voltage, collector-to-emitter, base open and 15.0 maximum breakdown voltage, collector-to-base, emitter open and 3.0 maximum breakdown voltage, emitter-to-base, collector open
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Transfer Ratio
80.0 minimum small-signal short-circuit forward current transfer ratio, common-emitter and 300.0 maximum small-signal short-circuit forward current transfer ratio, common-emitter
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Internal Configuration
junction contact
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Semiconductor Material
silicon
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Channel Polarity And Control Type (Non-Core)
p-channel junction type
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Current Rating Per Characteristic
10.00 milliamperes zero-gate-voltage source current preset
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Electrode Internally-Electrically Connected To Case
base
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Overall Width Across Flats
0.178 inches minimum and 0.195 inches maximum
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Inclosure Material
metal
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Terminal Type And Quantity
3 uninsulated wire lead
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Mounting Method
terminal
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Overall Length
0.670 inches minimum