NSN: 5961-01-339-6772
Semiconductor Devices and Associated Hardware
TRANSISTOR
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Mounting Method
terminal
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Features Provided
burn in and electrostatic sensitive and quality assurance level txv
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~1
llector to base voltage/static/emitter open and -4.5 maximum emitter to base vol
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Terminal Type And Quantity
3 uninsulated wire lead
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Overall Diameter
0.209 inches minimum and 0.230 inches maximum
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Terminal Circle Diameter
0.100 inches nominal
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Field Force Effect Type
electrostatic charge
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Semiconductor Material
silicon
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~2
tage, static, collector open
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Voltage Rating In Volts Per Characteristic
-15.0 maximum collector to emitter voltage/static/base open and -15.0 maximum co
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Current Rating Per Characteristic
30.00 milliamperes maximum collector current, dc
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Power Rating Per Characteristic
200.0 milliwatts maximum total device dissipation
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Internal Junction Configuration
pnp
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Internal Configuration
junction contact
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Function For Which Designed
switching
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Terminal Length
0.500 inches minimum
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Overall Length
0.170 inches minimum and 0.210 inches maximum
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Inclosure Material
metal