NSN: 5961-01-343-3640

Technical Characteristics

• Inclosure Material

  metal and plastic

• Overall Height

  0.173 inches nominal

• Mounting Method

  unthreaded hole

• Semiconductor Material

  silicon

• Current Rating Per Characteristic

  10.00 amperes maximum drain current

• Voltage Rating In Volts Per Characteristic

  1000.0 maximum drain to gate voltage and 1000.0 maximum drain to source voltage and 20.0 maximum gate to source voltage

• Terminal Type And Quantity

  3 uninsulated wire lead

• Power Rating Per Characteristic

  75.0 watts maximum total power dissipation

• Maximum Operating Temp Per Measurement Point

  150.0 deg celsius junction

• Overall Length

  1.066 inches nominal

• Overall Width

  0.389 inches nominal

• Mounting Facility Quantity

  1

• Internal Configuration

  field effect

• (Non-Core Data) Channel Polarity And Control Type

  n-channel insulated gate type

• Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

  to-220ab