NSN: 5961-01-345-5668

Technical Characteristics

• Inclosure Material

  metal

• Mounting Facility Quantity

  2

• Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

  to-3

• Internal Junction Configuration

  pn all semiconductor device diode

• Field Force Effect Type

  electrostatic charge

• Features Provided

  hermetically sealed case and electrostatic sensitive

• Semiconductor Material

  silicon all semiconductor device diode

• Voltage Rating In Volts Per Characteristic

  45.0 maximum repetitive peak reverse voltage, maximum peak total value all semiconductor device diode and 35.00 maximum working peak reverse voltage, maximum peak total value

• Current Rating Per Characteristic

  400.00 amperes maximum peak forward surge current all semiconductor device diode and 30.00 amperes maximum average forward current averaged over a full 60-hz cycle and 2.00 amperes maximum reverse current, peak

• Maximum Operating Temp Per Measurement Point

  150.0 deg celsius junction

• Terminal Type And Quantity

  2 pin and 1 case

• Overall Length

  1.573 inches maximum

• Overall Height

  0.450 inches maximum

• Overall Width

  1.050 inches maximum

• Internal Configuration

  junction contact all semiconductor device diode

• Component Name And Quantity

  2 semiconductor device diode

• Mounting Method

  unthreaded hole