NSN: 5961-01-358-1919
Semiconductor Devices and Associated Hardware
TRANSISTOR
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Power Rating Per Characteristic
290.0 milliwatts maximum total power dissipation
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Maximum Operating Temp Per Measurement Point
200.0 deg celsius junction
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Inclosure Material
ceramic
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Field Force Effect Type
electrostatic charge
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Features Provided
electrostatic sensitive
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Current Rating Per Characteristic
70.00 milliamperes maximum collector current, dc
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Terminal Type And Quantity
4 ribbon
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Overall Length
0.414 inches minimum
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Overall Height
0.071 inches maximum
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Overall Width
0.414 inches minimum
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Mounting Method
terminal
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Semiconductor Material
silicon
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Voltage Rating In Volts Per Characteristic
25.0 maximum collector to base voltage/static/emitter open and 12.0 maximum collector to emitter voltage/static/base open and 3.0 maximum emitter to base voltage, static, collector open