NSN: 5961-01-359-2002
Semiconductor Devices and Associated Hardware
TRANSISTOR
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Inclosure Material
plastic or ceramic
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Channel Polarity And Control Type (Non-Core)
n-channel insulated gate type
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Internal Configuration
field effect
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Maximum Operating Temp Per Measurement Point
150.0 deg celsius junction
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Voltage Rating In Volts Per Characteristic
60.0 maximum drain to gate voltage and 60.0 maximum drain to source voltage and 15.0 maximum gate to source voltage
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Power Rating Per Characteristic
1.0 watts small-signal input power, common-emitter peak
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Terminal Length
0.500 inches maximum
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Semiconductor Material
silicon
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Overall Length
0.260 inches minimum and 0.280 inches maximum
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-237
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Current Rating Per Characteristic
0.50 milliamperes zero-gate-voltage source current pascal and 10.00 milliamperes source cutoff current universal
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Features Provided
electrostatic sensitive
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Overall Height
0.125 inches minimum and 0.165 inches maximum
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Mounting Method
terminal
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Terminal Type And Quantity
3 uninsulated wire lead
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Overall Width
0.160 inches minimum and 0.215 inches maximum