NSN: 5961-01-369-7614

Semiconductor Devices and Associated Hardware

TRANSISTOR

5961 - Semiconductor Devices and Associated Hardware

TRANSISTOR

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Technical Characteristics

  • Inclosure Material

    metal

  • Overall Length

    0.820 inches nominal

  • Overall Height

    0.140 inches nominal

  • Overall Width

    0.252 inches nominal

  • Internal Configuration

    junction contact

  • Electrode Internally-Electrically Connected To Case

    base

  • Mounting Method

    unthreaded hole

  • Semiconductor Material

    silicon

  • ~1

    breakdown voltage, collector-to-emitter, with base short-circuited to emitter a

  • ~2

    nd 3.5 maximum breakdown voltage, emitter-to-base, collector open

  • Voltage Rating In Volts Per Characteristic

    52.0 maximum breakdown voltage, collector-to-base, emitter open and 52.0 maximum

  • Transfer Ratio

    20.0 minimum static forward current transfer ratio, common-emitter and 120.0 max

  • Maximum Operating Temp Per Measurement Point

    200.0 deg celsius junction

  • Terminal Type And Quantity

    2 uninsulated wire lead

  • Terminal Length

    0.160 inches nominal

  • Mounting Facility Quantity

    2

  • Internal Junction Configuration

    npn

  • Field Force Effect Type

    electrostatic charge

  • Features Provided

    burn in and electrostatic sensitive and hermetically sealed case

  • Current Rating Per Characteristic

    1.00 milliamperes maximum collector cutoff current, dc, emitter open

  • ~1

    imum static forward current transfer ratio, common-emitter

Certified to
AS6081 Methods

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