NSN: 5961-01-387-2984

Technical Characteristics

• Internal Junction Configuration

  npn all transistor

• Mounting Method

  terminal

• Semiconductor Material

  silicon all transistor

• ~1

  ector to emitter voltage/static/base open and 6.0 maximum emitter to base voltag

• Voltage Rating In Volts Per Characteristic

  70.0 maximum collector to base voltage/static/emitter open and 60.0 maximum coll

• Current Rating Per Characteristic

  30.00 milliamperes maximum collector current, dc all transistor

• Inclosure Material

  metal

• Overall Length

  0.260 inches maximum

• Terminal Length

  0.500 inches minimum

• Overall Diameter

  0.370 inches maximum

• Internal Configuration

  junction contact all transistor

• Component Name And Quantity

  2 transistor

• ~2

  e, static, collector open all transistor

• Power Rating Per Characteristic

  1.25 watts maximum total power dissipation all transistor

• Maximum Operating Temp Per Measurement Point

  200.0 deg celsius junction

• Test Data Document

  08748-tr169 drawing

• Terminal Type And Quantity

  6 uninsulated wire lead

• Specification/Standard Data

  81349-mil-prf-19500/355 government specification