NSN: 5961-01-387-4814

Technical Characteristics

• Terminal Type And Quantity

  6 uninsulated wire lead

• Precious Material And Location

  leads and terminal pad surfaces option. gold

• Power Rating Per Characteristic

  300.0 milliwatts maximum total power dissipation single semiconductor device photo

• Current Rating Per Characteristic

  50.00 milliamperes maximum collector current, dc single semiconductor device photo

• Voltage Rating In Volts Per Characteristic

  45.0 maximum collector to base voltage/static/emitter open single semiconductor device photo and 40.0 maximum collector to emitter voltage/static/base open and 7.0 maximum emitter to base voltage, static, collector open

• Voltage Rating In Volts Per Characteristic

  2.0 maximum reverse voltage, instantaneous single light emitting diode

• Mounting Method

  terminal

• Component Name And Quantity

  1 light emitting diode and 1 semiconductor device photo

• Internal Junction Configuration

  npn single semiconductor device photo

• Terminal Length

  0.500 inches minimum

• Overall Length

  0.185 inches maximum

• Precious Material

  gold

• Special Features

  environmental stress screening per tr169.

• Maximum Operating Temp Per Measurement Point

  125.0 deg celsius junction

• Color Tone Produced Per Source

  infrared semiconductor single light emitting diode

• Current Rating Per Characteristic

  40.00 milliamperes maximum forward current, dc single light emitting diode

• Semiconductor Material

  silicon single semiconductor device photo

• Semiconductor Material

  gallium arsenide single light emitting diode

• Field Force Effect Type

  electrostatic charge

• Internal Junction Configuration

  pn single light emitting diode

• Channel Polarity And Control Type

  n-channel insulated gate type

• Internal Configuration

  junction contact all semiconductor

• Overall Diameter

  0.370 inches maximum

• Inclosure Material

  metal