NSN: 5961-01-390-0168
Semiconductor Devices and Associated Hardware
TRANSISTOR
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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Channel Polarity And Control Type (Non-Core)
p-channel insulated gate type
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Current Rating Per Characteristic
-30.00 milliamperes source cutoff current maximum of standard range
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Terminal Type And Quantity
3 uninsulated wire lead
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Mounting Method
terminal
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Overall Diameter
0.209 inches minimum and 0.230 inches maximum
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Power Rating Per Characteristic
375.0 milliwatts small-signal input power, common-collector absolute
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Voltage Rating In Volts Per Characteristic
-25.0 maximum drain to source voltage and 10.0 maximum gate to source voltage
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Electrode Internally-Electrically Connected To Case
source
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Semiconductor Material
silicon
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Maximum Operating Temp Per Measurement Point
150.0 deg celsius junction
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Internal Configuration
field effect
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Inclosure Material
metal
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Joint Electronic Device Engineering Council/Jedec/Case Outline Designation
to-18
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Overall Length
0.170 inches minimum and 0.210 inches maximum