NSN: 5961-01-476-2269

Semiconductor Devices and Associated Hardware

SEMICONDUCTOR DEVICE,DIODE

5961 - Semiconductor Devices and Associated Hardware

SEMICONDUCTOR DEVICE,DIODE

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Technical Characteristics

  • Voltage Rating In Volts Per Characteristic

    18.0 minimum reverse breakdown voltage, instantaneous and 22.0 maximum reverse breakdown voltage, instantaneous

  • Maximum Operating Temp Per Measurement Point

    150.0 deg celsius ambient air

  • Precious Material And Location

    plating gold

  • Precious Material

    gold

  • Current Rating Per Characteristic

    1.00 milliamperes drain current pascal

  • ~1

    voltage (vcl) 29.1 volts at peak pulse curre

  • Special Features

    diode is a 5 amp, 580 watt, bipolar transient suppressor, dual die; each die is glass passivated; metalization material is nickel and gold plated (ni-ni-au); standoff voltage (vso) 16.20 volts; max. reverse leakage (ir) at vso is 1 microamp; max. clamping

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