NSN: 5961-01-476-2270
Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,DIODE
5961 - Semiconductor Devices and Associated Hardware
SEMICONDUCTOR DEVICE,DIODE
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Technical Characteristics
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~1
doubled when reverse breakdown voltage is 10 vo
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Special Features
diode is a 5 amp - 580 watt bipolar transient suppressor, dual die; each die is glass passivated; metalization material is nickel and gold plated (ni-ni-au); standoff voltage (vso) 5.50 volts; max. reverse leakage (ir) at vso is 600 microamps (limit is
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Maximum Operating Temp Per Measurement Point
150.0 deg celsius ambient air
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Precious Material And Location
plating gold
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Precious Material
gold
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Current Rating Per Characteristic
10.00 milliamperes drain current pascal
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Voltage Rating In Volts Per Characteristic
6.12 minimum reverse breakdown voltage, instantaneous and 7.48 maximum reverse breakdown voltage, instantaneous