NSN: 5961-01-476-2270

Semiconductor Devices and Associated Hardware

SEMICONDUCTOR DEVICE,DIODE

5961 - Semiconductor Devices and Associated Hardware

SEMICONDUCTOR DEVICE,DIODE

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Technical Characteristics

  • ~1

    doubled when reverse breakdown voltage is 10 vo

  • Special Features

    diode is a 5 amp - 580 watt bipolar transient suppressor, dual die; each die is glass passivated; metalization material is nickel and gold plated (ni-ni-au); standoff voltage (vso) 5.50 volts; max. reverse leakage (ir) at vso is 600 microamps (limit is

  • Maximum Operating Temp Per Measurement Point

    150.0 deg celsius ambient air

  • Precious Material And Location

    plating gold

  • Precious Material

    gold

  • Current Rating Per Characteristic

    10.00 milliamperes drain current pascal

  • Voltage Rating In Volts Per Characteristic

    6.12 minimum reverse breakdown voltage, instantaneous and 7.48 maximum reverse breakdown voltage, instantaneous

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