NSN: 5961-01-478-8778

Semiconductor Devices and Associated Hardware

TRANSISTOR

5961 - Semiconductor Devices and Associated Hardware

TRANSISTOR

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Technical Characteristics

  • Internal Configuration

    junction contact

  • Voltage Rating In Volts Per Characteristic

    75.0 maximum collector to base voltage, dc and 40.0 maximum collector to emitter voltage/static/base open and 6.0 maximum emitter to base voltage, static, collector open

  • Current Rating Per Characteristic

    600.00 milliamperes peak forward surge current megahertz

  • Nuclear Hardness Critical Feature

    hardened

  • Mounting Method

    terminal

  • Terminal Length

    1.110 millimeters maximum

  • Terminal Type And Quantity

    3 pin

  • Maximum Operating Temp Per Measurement Point

    150.0 deg celsius junction

  • Overall Width

    2.500 millimeters maximum

  • Electrode Internally-Electrically Connected To Case

    base

  • End Item Identification

    m-1 abrams tank

  • Power Rating Per Characteristic

    330.0 milliwatts small-signal input power, common-collector preset

  • Inclosure Material

    plastic

  • Semiconductor Material

    silicon

  • Overall Length

    3.050 millimeters maximum

  • Specification/Standard Data

    19200-12467085 manufacturers source control

  • Overall Height

    1.110 millimeters maximum

  • Special Features

    junction pattern arrangement: npn

Certified to
AS6081 Methods

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