NSN: 5961-01-514-2181

Semiconductor Devices and Associated Hardware

TRANSISTOR

5961 - Semiconductor Devices and Associated Hardware

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Technical Characteristics

  • Mounting Facility Quantity

    2

  • Overall Length

    1.200 inches nominal

  • Special Features

    8gold metalized; package style - ah; high efficiency; linear; high gain; maximum junction temperature plus 200.0 degrees c; storage temperature minus 65.0 to plus 150.0 degrees c; designed specifically for broadband radio frequency (rf) applications

  • Inclosure Material

    metal

  • Features Provided

    low noise

  • Mounting Method

    slot

  • Part Name Assigned By Controlling Agency

    silicon rf power, vdmos transistor

  • Voltage Rating In Volts Per Characteristic

    70.0 maximum drain to source voltage and 70.0 maximum drain to gate voltage and 30.0 maximum gate to source voltage

  • Overall Width

    0.550 inches nominal

  • Power Rating Per Characteristic

    350.0 watts small-signal input power, common-collector absolute

  • Overall Height

    0.200 inches maximum

  • Current Rating Per Characteristic

    16.00 amperes source cutoff current maximum of standard range

  • Semiconductor Material

    silicon

  • Terminal Type And Quantity

    2 tab, solder lug

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