NSN: 5961-01-517-8512

Technical Characteristics

• Mounting Method

  unthreaded hole

• Mounting Facility Quantity

  2

• Special Features

  ambeint temp -55 to +150 degree c; semi conductor device, power mosfet single die; hardness critical item

• Inclosure Material

  plastic

• Voltage Rating In Volts Per Characteristic

  70.0 maximum breakdown voltage, drain-to-source, with all other terminals short-circuited to source and 20.0 maximum gate to source voltage

• Semiconductor Material

  silicon

• Overall Width

  0.990 inches minimum and 1.001 inches maximum

• Part Name Assigned By Controlling Agency

  semiconductor device,power mosfet single die

• Overall Height

  0.460 inches minimum and 0.481 inches maximum

• Overall Length

  1.496 inches minimum and 1.505 inches maximum

• Nuclear Hardness Critical Feature

  hardened

• Criticality Code Justification

  feat

• Power Rating Per Characteristic

  700.0 watts maximum total device dissipation

• Terminal Type And Quantity

  2 threaded hole

• Current Rating Per Characteristic

  340.00 amperes maximum drain current and 340.00 amperes maximum source current