NSN: 5961-01-523-8492
Semiconductor Devices and Associated Hardware
TRANSISTOR
5961 - Semiconductor Devices and Associated Hardware
TRANSISTOR
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Technical Characteristics
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~1
in automotive and general purpose switching ap
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Inclosure Material
plastic and metal
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Overall Diameter
4.5 millimeters maximum
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Current Rating Per Characteristic
31.00 amperes source cutoff current maximum of standard range and 180.00 amperes source cutoff current universal
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Terminal Type And Quantity
3 pin and 1 unthreaded hole
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Overall Length
29.3 millimeters maximum
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Mounting Facility Quantity
3
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Overall Width
10.3 millimeters maximum
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Semiconductor Material
silicon
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Mounting Method
terminal and unthreaded hole
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Voltage Rating In Volts Per Characteristic
55.0 maximum drain to gate voltage and 55.0 maximum drain to source voltage and 16.0 maximum gate to source voltage
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End Item Identification
ainac/ric ar, dummy load,electric
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Overall Width Across Flats
0.9 millimeters maximum
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Maximum Operating Temp Per Measurement Point
175.0 deg celsius junction
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Part Name Assigned By Controlling Agency
transistor
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Overall Height
4.5 millimeters maximum
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Power Rating Per Characteristic
103.0 watts small-signal input power, common-collector preset
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Special Features
n-channel enhancement mode standard level field-effect power transistor in a plastic envelope using trench technology. the device features very low on-state resistance and has integral zener diodes giving esd protection up to 2kv. it is intended for use