NSN: 5961-01-532-4773

Technical Characteristics

• Inclosure Material

  plastic or ceramic

• Terminal Type And Quantity

  3 uninsulated wire lead

• Mounting Method

  terminal

• Joint Electronic Device Engineering Council/Jedec/Case Outline Designation

  to-220ab

• End Item Identification

  nsn 4935-01-136-0233; shop equipment, guided missile system; w/s; missile, patriot

• Special Features

  tmos v, power field effect transistor; p-channel enhancement-mode silicon gate

• Current Rating Per Characteristic

  30.00 amperes all primaries maximum of standard range

• Overall Length

  1.130 inches nominal

• Semiconductor Material

  silicon

• Function For Which Designed

  switching

• Terminal Length

  0.500 inches minimum

• Overall Width

  0.039 inches nominal

• Internal Configuration

  field effect

• Voltage Rating In Volts Per Characteristic

  60.0 nominal drain to source voltage

• Maximum Operating Temp Per Measurement Point

  175.0 deg celsius junction

• Overall Height

  0.160 inches minimum and 0.190 inches maximum

• Power Rating Per Characteristic

  75.0 watts small-signal input power, common-collector preset