NSN: 5961-01-549-7400

Technical Characteristics

• Special Features

  n-channel enhancement; mode lateral mosfet

• Semiconductor Material

  silicon

• Inclosure Material

  plastic

• Overall Width

  0.245 inches minimum and 0.255 inches maximum

• Overall Length

  0.255 inches minimum and 0.265 inches maximum

• Part Name Assigned By Controlling Agency

  rf power field effect transistor

• Overall Height

  0.065 inches minimum and 0.072 inches maximum

• Voltage Rating In Volts Per Characteristic

  -0.5 minimum drain to source voltage and 40.0 maximum drain to source voltage