NSN: 5962-00-162-3934

Technical Characteristics

• Maximum Power Dissipation Rating

  150.0 milliwatts

• Body Length

  0.740 inches minimum and 0.760 inches maximum

• Operating Temp Range

  m0.0/p70.0 deg celsius

• Features Provided

  monolithic and hermetically sealed and positive outputs and expandable

• Inclosure Material

  silicon

• Inclosure Configuration

  dual-in-line

• Design Function And Quantity

  2 gate,nand

• Unpackaged Unit Weight

  2.0 grams

• Body Width

  0.240 inches minimum and 0.280 inches maximum

• Body Height

  0.165 inches maximum

• Storage Temp Range

  m55.0/p100.0 deg celsius

• Output Logic Form

  diode-transistor logic

• Input Circuit Pattern

  dual 5 input

• Time Rating Per Chacteristic

  30.00 nanoseconds nominal propagation delay time,low to high level output and 30.00 nanoseconds nominal propagation delay time,high to low level output

• Test Data Document

  49671-2187267 drawing