NSN: 5962-00-430-8413

Technical Characteristics

• Body Height

  0.120 inches maximum

• Output Logic Form

  transistor-transistor logic

• Inclosure Configuration

  dual-in-line

• Inclosure Material

  ceramic and glass

• Body Width

  0.235 inches minimum and 0.265 inches maximum

• Test Data Document

  03848-62522 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)

• Design Function And Quantity

  2 gate, nand-nor

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Maximum Power Dissipation Rating

  60.0 milliwatts

• Time Rating Per Chacteristic

  40.00 nanoseconds maximum propagation delay time, low to high level output and 50.00 nanoseconds maximum propagation delay time, high to low level output

• Body Length

  0.685 inches minimum and 0.715 inches maximum

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Input Circuit Pattern

  dual 4 input

• Features Provided

  edge triggered and monolithic and high speed and hermetically sealed and positive outputs