NSN: 5962-00-434-3147

Technical Characteristics

• Memory Device Type

  rom

• Terminal Surface Treatment

  solder

• Body Height

  0.030 inches minimum and 0.070 inches maximum

• Output Logic Form

  p-type metal oxide-semiconductor logic

• Inclosure Material

  ceramic and glass

• Time Rating Per Chacteristic

  80.00 nanoseconds maximum propagation delay time, low to high level output and 80.00 nanoseconds maximum propagation delay time, high to low level output

• Test Data Document

  13499-351-7503 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)

• Body Length

  0.360 inches minimum and 0.410 inches maximum

• Maximum Power Dissipation Rating

  150.0 milliwatts

• Features Provided

  hermetically sealed and monolithic and negative outputs and w/enable and positive outputs and edge triggered

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Inclosure Configuration

  flat pack

• Input Circuit Pattern

  1 input

• Terminal Type And Quantity

  24 flat leads

• Body Width

  0.240 inches minimum and 0.280 inches maximum

• Voltage Rating And Type Per Characteristic

  0.3 volts maximum power source

• Storage Temp Range

  -65.0/+150.0 deg celsius