NSN: 5962-00-436-1412

Technical Characteristics

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Memory Device Type

  rom

• Terminal Surface Treatment

  solder

• Voltage Rating And Type Per Characteristic

  7.0 volts maximum power source

• Features Provided

  thin film and monolithic and w/enable and hermetically sealed and w/resistor

• Inclosure Configuration

  dual-in-line

• Bit Quantity (Non-Core)

  256

• Output Logic Form

  transistor-transistor logic

• Terminal Type And Quantity

  16 printed circuit

• Time Rating Per Chacteristic

  50.00 nanoseconds maximum propagation delay time, low to high level output and 50.00 nanoseconds maximum propagation delay time, high to low level output

• Input Circuit Pattern

  6 input

• Word Quantity (Non-Core)

  32

• Inclosure Material

  ceramic or glass

• Operating Temp Range

  -55.0/+125.0 deg celsius