NSN: 5962-00-443-9703

Technical Characteristics

• Features Provided

  monolithic and temperature controlled and high voltage and hermetically sealed and positive outputs

• Input Circuit Pattern

  dual 4 input

• Operating Temp Range

  -55.0/+125.0 deg celsius

• Voltage Rating And Type Per Characteristic

  -1.5 volts minimum power source and 5.5 volts maximum power source

• Terminal Type And Quantity

  14 printed circuit

• Output Logic Form

  diode-transistor logic

• Maximum Power Dissipation Rating

  32.5 milliwatts

• Body Width

  0.220 inches minimum and 0.280 inches maximum

• Body Height

  0.140 inches minimum and 0.180 inches maximum

• Storage Temp Range

  -65.0/+150.0 deg celsius

• Design Function And Quantity

  2 gate, nand-nor

• Terminal Surface Treatment

  solder

• Time Rating Per Chacteristic

  80.00 nanoseconds maximum propagation delay time, low to high level output and 30.00 nanoseconds maximum propagation delay time, high to low level output

• Test Data Document

  49956-465702 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)

• Inclosure Material

  ceramic and glass

• Body Length

  0.660 inches minimum and 0.785 inches maximum

• Inclosure Configuration

  dual-in-line

• Case Outline Source And Designator

  t0-116 joint electron device engineering council