NSN: 5962-00-736-0138

Technical Characteristics

• Memory Device Type

  rom

• Voltage Rating And Type Per Characteristic

  -1.5 volts minimum power source and 5.5 volts maximum power source

• Terminal Surface Treatment

  solder

• Bit Quantity

  1024

• Input Circuit Pattern

  10 input

• Inclosure Configuration

  dual-in-line

• Inclosure Material

  ceramic and glass

• Storage Temp Range

  -65.0 to 150.0 deg celsius

• Operating Temp Range

  -55.0 to 125.0 deg celsius

• Maximum Power Dissipation Rating

  625.0 milliwatts

• Terminal Type And Quantity

  16 printed circuit

• Test Data Document

  49956-481430 drawing

• Unpackaged Unit Weight

  2.2 grams

• Time Rating Per Chacteristic

  65.00 nanoseconds maximum propagation delay time, low to high level output

• Case Outline Source And Designator

  d-2 mil-m-38510

• Word Quantity

  256

• Output Logic Form

  transistor-transistor logic

• Features Provided

  hermetically sealed and bipolar and monolithic and positive outputs and w/enable and programmable and programmed and high speed and w/open collector

• Body Height

  0.140 inches minimum and 0.185 inches maximum

• Body Width

  0.220 inches minimum and 0.310 inches maximum

• Body Length

  0.896 inches maximum